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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU108 DESCRIPTION *High Voltage *High Switching Speed *Collector Current- IC = 5A APPLICATIONS *Designed for high voltage CRT scanning applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Emitter Current-Continuous Collector Power Dissipation @VCE100V,TC95 Junction Temperature Storage Temperature VALUE 1500 750 5 5 3.5 8.5 12.5 115 -65~115 UNIT V V V A A A W IE PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.6 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU108 MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 5.0 V VBE(sat) ICEX ICBO Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.3 V Collector Cutoff Current VCE= 1500V; VBE= -2V VCB= 1500V; IE= 0 1.0 mA Collector Cutoff Current 1.0 mA hFE DC Current Gain IC= 1A ; VCE= 5V 8 s tf Fall Time IC= 4.5A 1.2 isc Websitewww.iscsemi.cn 2 |
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